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Titolo Data di pubblicazione Autore(i) File
Hot Hole Gate Current in Surface Channel p-MOSFETs 1-gen-2001 Driussi, Francesco; Esseni, David; Selmi, Luca; Piazza, F.
Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K 1-gen-1989 Lanzoni, M; Manfredi, M; Selmi, Luca; Sangiorgi, Enrico; Cappelletti, R; Ricco, B.
Hysteresis cycle in the Latch-up characteristic of wide CMOS structures 1-gen-1988 Selmi, Luca; Sangiorgi, Enrico; Crisenza, G; Re, D; Ricco, B.
Impact of band structure on charge trapping in thin SiO2/Al2O3/Poly-Si gate stacks 1-gen-2004 L., Pantisano; Lucci, Luca; E., Cartier; A., Kerber; G., Groeseneken; M., Green; Selmi, Luca
Influence of interface traps on ferroelectric NC-FETs 1-gen-2018 Rollo, Tommaso; Esseni, David
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors 1-gen-2013 Knoll, L; Zhao, Q. J.; Nichau, A; Trellenkamp, S; Richter, S; Schäfer, A; Esseni, David; Selmi, Luca; Bourdelle, K. K.; Mantl, S.
Large On-Current Enhancement in Hetero-Junction Tunnel-FETs via Molar Fraction Grading 1-gen-2014 Sylvan, Brocard; Marco G., Pala; Esseni, David
Minimizing thermal resistance and collector-to-substrate capacitance in graded base SiGe BiCMOS on SOI 1-gen-2002 M., Mastrapasqua; Palestri, Pierpaolo; A., Pacelli; G. K., Celler; M. R., Frei; P. R., Smith; R. W., Johnson; L., Bizzarro; W., Lin; T. G., Ivanov; M. S., Carroll; I. C., Kizilyalli; C. A., King
Mobility simulation of a novel Si/SiGe FET structure 1-gen-1996 Abramo, Antonio; J., Bude; F., Venturi; M. R., Pinto
Monte Carlo Simulation of Impact Ionization in SiGe HBTs 1-gen-2001 Palestri, Pierpaolo; Pacelli, A.; Mastrapasqua, M.; Bude, J. D.
New design perspective for Ferroelectric NC-FETs 1-gen-2018 Rollo, Tommaso; Esseni, David
Non-Local Effects in p-MOSFET Substrate Hot Hole Injection Experiments 1-gen-1995 Selmi, Luca; Sangiorgi, Enrico; Bez, R.
"Non-scaling of MOSFETs Linear Resistance in the Deep Sub-micron Regime" 1-gen-1998 Esseni, David; H., Iway; M. SAITO AND B., Ricco
On the Apparent Mobility in Nanometric n-MOSFETs 1-gen-2007 Zilli, M; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
On the electrical monitor for device degradation in the CHISEL stress regime 1-gen-2003 Driussi, Francesco; Esseni, David; Selmi, Luca
Physical origin of the excess thermal noise in short channel MOSFETs 1-gen-2001 Goo, J. S.; Choi, C. H.; Abramo, Antonio; Ahn, J. G.; Yu, Z.; Lee, T. H.; Dutton, R. W.
Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs 1-gen-2018 Wang, H.; Jiang, X.; Xu, N.; Han, G.; Hao, Y.; Li, S. S.; Esseni, D.
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs 1-gen-2012 Conzatti, Francesco; Pala, M. G.; Esseni, David
Temperature Dependence of Gate and Substrate Currents in the CHE Crossover Regime 1-gen-1995 Esseni, David; Selmi, Luca; Sangiorgi, E; Bez, R; Ricco, B.
Three dimensional distribution of CMOS Latch-up current 1-gen-1987 Sangiorgi, E; Ricco, B; Selmi, Luca
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